← 返回论文列表 📄 下载原文 PDF  ISSCC 2015 · 10.3
ISSCC 2015Session 10 · ADVANCED WIRELINE TECHNIQUES AND PLLsWireline I/O40nm CMOS

A 7.5mW 7.5Gb/s Mixed NRZ/Multi-Tone Serial-Data Transceiver for Multi-Drop Memory Interfaces in 40nm CMOS

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

该论文提出一种混合NRZ/多音调串行数据收发器,用于多分支内存接口,在40nm CMOS工艺下实现7.5mW功耗和7.5Gb/s数据率,解决了多分支总线中的带宽和功耗挑战。

💡 主要创新点

工艺节点
40nm CMOS
重要性
发表年份
ISSCC 2015

🏷 关键词

混合NRZ/多音调串行数据收发器多分支内存接口低功耗40nm CMOS

📄 原文摘要

Advancements in CMOS technology have enabled exponential growth of computational power. However, data processing efficiency also relies on sufficient data communication bandwidth between different units of a computing system. Memory systems typically apply dual in-line memory modules (DIMMs) because of their high capacity and low cost. However, the multi-drop bus (MDB) interface between these units and the controller is challenging for bandwidth and power reasons. Multi-tone signaling has promising characteristics for this type of interface [1]. To keep up with the ever growing demand for higher bandwidth in multi-drop buses, we develop a 7.5Gb/s (3.75Gb/s/pin) NRZ/multi-tone (NRZ/MT) transceiver with a total link power efficiency of 1mW/Gb/s. The main idea presented in this paper is to apply a modulation scheme that matches the transmitted spectrum well to the channel frequency response and

👥 作者与机构

Kiarash Gharibdoust1, Armin Tajalli1,2, Yusuf Leblebici1

EPFL, Lausanne, Switzerland, 2Kandou Bus, Lausanne, Switzerland

分类:Wireline I/O · 年份:ISSCC 2015