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本文提出了一种采用28nm CMOS工艺的NEMS阵列控制集成电路，用于亚阿克级质量传感应用。该芯片解决了NEMS传感器在高频（10MHz-1GHz）和高驱动电压（1V-10V）下的驱动电子挑战，通过NEMS/CMOS共集成实现高灵敏度质量检测。
promoted NEMS sensors as viable and highly sensitive candidates for gravimetric applications such as gas sensing, mass spectrometry and biochemical analysis [1]. The high sensitivity to mass is related to the small dimensions and intrinsic mass of the NEMS themselves, which results in resonant frequencies in the 10MHz-to-1GHz range and drive voltages reaching 1V to 10V. Such a combination of frequencies and voltages is a challenge for the driving electronics. Although several promising approaches using NEMS/CMOS co-integration have been recently published [2], many experiments in the field are currently using discrete electronic boards and specialized lab instruments. To respond to size, power and cost demands, an IC
Nicolas Delorme1, Christophe Le Blanc1, Alessandro Dezzani1,
Mickaël Bely1, Alexandre Ferret1, Simon Laminette1, Jérôme Roudier1, Eric Colinet2 Asygn, Grenoble, France, Apix Analytics, Grenoble, France 1 2 Progress in silicon technology has