A 20V 8.4W 20MHz Four-Phase GaN DC-DC Converter with Fully On-Chip Dual-SR Bootstrapped GaN FET Driver Achieving 4ns Constant Propagation Delay and 1ns Switching Rise Time

📋 论文概要

该论文提出了一种20V、8.4W、20MHz的四相GaN DC-DC转换器，采用了全片上双SR自举GaN FET驱动器，实现了4ns的快速导通时间，解决了传统高压栅极驱动器传播延迟大的问题。

💡 主要创新点

• 提出全片上双SR自举GaN FET驱动器，减少寄生参数并实现高速驱动。
• 采用四相架构在20MHz高频下实现8.4W功率输出和高效率。

🏷 关键词

📄 原文摘要

response power delivery systems has been growing in high-voltage industrial electronics applications. Gallium Nitride (GaN) FETs showing a superior figure of merit (Rds,ON X Qg) in comparison with silicon FETs [1] can enable both high-frequency and high-efficiency operation in these applications, thus making power converters smaller, faster and more efficient. However, the lack of GaNcompatible high-speed gate drivers is a major impediment to fully take advantage of GaN FET-based power converters. Conventional high-voltage gate drivers usually exhibit propagation delay, tdelay, of up to several 10s of ns in the level shifter (LS), which becomes a critical problem as the switching frequency, fSW, reaches the 10MHz regime. Moreover, the switching slew rate (SR) of

👥 作者与机构

Min Kyu Song1, Lei Chen1, Joseph Sankman1,

Stephen Terry2, Dongsheng Ma1 University of Texas, Dallas, TX, Texas Instruments, Dallas, TX 1 2 Recently, the demand for miniaturized and fast transient