1GHz GaN-MMIC Monolithically Integrated MEMS-Based Oscillators

📋 论文概要

本文提出了一种在GaN MMIC技术中单片集成GaN MEMS谐振器的1GHz振荡器，解决了将高Q MEMS谐振器与标准电路技术集成的问题，实现了低相位噪声的振荡器。

💡 主要创新点

• 首次在GaN MMIC技术中单片集成GaN MEMS谐振器，实现1GHz振荡器。
• 利用GaN MEMS谐振器的高Q特性，降低相位噪声。
• 实现了MEMS谐振器与GaN MMIC的共制造，无需额外工艺步骤。

🏷 关键词

📄 原文摘要

Low phase noise oscillators are essential building blocks in the front end of all communication systems. With the continuous demand for higher data rates and reduced size, weight, and power consumption, significant research in the past decade has been geared toward integrating high-Q GHz frequency MEMS resonators with standard circuit technologies [1],[2]. This paper presents monolithic integration of GaN MEMS resonators in GaN MMIC technology, which has become mainstream in RF LNA and PA design. Groups at MIT, Michigan and IEMN have previously demonstrated GaN MEMS resonators co-fabricated with HEMTs. This work is the demonstration of a single-chip closed-loop oscillator circuit implementing both passive and active devices in this growing technology platform. The oscillators presented in this work are realized in a Au-free GaN HEMT process, using a GaN-on-Si heterostructure manufactured by Raytheon,

👥 作者与机构

Bichoy W. Bahr, Laura C. Popa, Dana Weinstein

Massachusetts Institute of Technology, Cambridge, MA