A 128kb 4b/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method

📋 论文概要

该论文提出了一种基于结晶In-Ga-Zn氧化物FET的128kb 4b/cell非易失性存储器，通过Vt取消写入方法解决了多值存储中的阈值电压波动问题，适用于低功耗、高速度的工作存储器需求。

💡 主要创新点

• 采用结晶IGZO FET实现4b/cell的多值非易失性存储，显著提升存储密度。
• 提出Vt Cancel Write方法，有效补偿晶体管阈值电压变化，确保多值写入的准确性。
• 利用氧化物半导体特性实现低功耗操作，适应大数据时代对工作存储器的高要求。

🏷 关键词

📄 原文摘要

Takahiko Ishizu1, Yoshinori Ieda1, Naoto Yamade1, Hidekazu Miyairi1, Masayuki Sakakura1, Tomoaki Atsumi1, Yutaka Shionoiri1, Kiyoshi Kato1, Takashi Okuda1, Yoshitaka Yamamoto1, Masahiro Fujita2, Jun Koyama1, Shunpei Yamazaki1 Semiconductor Energy Laboratory, Kanagawa, Japan, University of Tokyo, Tokyo, Japan 1 2 As the number of devices connected to the Internet increases, servers and mobile devices must process increasingly large volumes of data, and also accommodate the increasing demand for high-speed and large-capacity working memory keeping the power consumption low. This need is being fulfilled by emerging devices, such as resistive RAM, phase-change RAM, and MRAM [1], which realize high-speed, high-density and nonvolatile memory, significantly enhancing the performance of CPUs with integrated memories. C-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) used in this study is a crystalline oxide semiconductor (OS) and specifically is crystalline IGZO with

👥 作者与机构

Takanori Matsuzaki1, Tatsuya Onuki1, Shuhei Nagatsuka1, Hiroki Inoue1,