A 25Gb/s Hybrid Integrated Silicon Photonic Transceiver in 28nm CMOS and SOI

📋 论文概要

该论文提出了一种在28nm CMOS和SOI平台上实现的25Gb/s混合集成硅光子收发器，解决了高速光互连中的功耗和集成度问题。通过将硅光子器件与CMOS电子电路混合集成，实现了低功耗、高速率的数据传输。

💡 主要创新点

• 采用28nm CMOS与SOI硅光子工艺的混合集成方案，实现了25Gb/s的高速光收发。
• 通过优化光器件和电路设计，降低了功耗并提高了集成度。

🏷 关键词

📄 原文摘要

Tomoyuki Akiyama1,3,4, Shigeaki Sekiguchi1,3,4, Hiroji Ebe1,3,4, Nobuhiro Imaizumi1, Tomoyuki Akahoshi1, Suguru Akiyama3, Shinsuke Tanaka3, Takasi Simoyama3, Ken Morito1,3,4, Takuji Yamamoto2, Toshihiko Mori1, Yoichi Koyanagi1, Hirotaka Tamura1 Fujitsu Laboratories, Kawasaki, Japan, Fujitsu Laboratories of America, Sunnyvale, CA, 3 Photonics Electronics Technology Research Association, Tsukuba, Japan, 4 Fujitsu Limited, Kawasaki, Japan, 1 2 5 contributed to this work while employed by Fujitsu Laboratories of America, Sunnyvale, CA Integrated photonic interconnect technology is free from the bandwidth-distance limitation that intrinsically exists in electrical interconnects, promising a disruptive alternative for next-generation scalable data centers. Silicon photonic platforms have been reported based on monolithic and hybrid integration. Monolithic systems mitigate integration overhead but require compromise in

👥 作者与机构

Yanfei Chen1, Masaya Kibune1, Asako Toda5, Akinori Hayakawa1,3,4,