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ISSCC 2015Session 23 · LOW-POWER SoCsDigital Processors20nm high-κ metal-gate

20nm High-κ Metal-Gate Heterogeneous 64b Quad-Core CPUs and Hexa-Core GPU for High-Performance and Energy-Efficient Mobile Application Processor

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📋 论文概要

该论文介绍了一款采用20nm高介电常数金属栅极工艺的异构移动SoC,集成了64位四核CPU和六核GPU,以满足高性能智能移动设备对计算和图形处理能力的迫切需求。通过异构架构和先进工艺,实现了高性能与高能效的平衡。

💡 主要创新点

工艺节点
20nm high-κ metal-gate
重要性
发表年份
ISSCC 2015

🏷 关键词

20nm工艺高介电常数金属栅极异构SoC64位四核CPU六核GPU低功耗

📄 原文摘要

Kwangil Kim, Ken Shin, Yohan Kwon, Heungchul Oh, Jaeyoung Lim, Dong-wook Lee, Jongho Lee, Inpyo Hong, Kyungkuk Chae, Heon-Hee Lee, Sung-Wook Lee, Seongho Song, Chung-Hee Kim, Jin-Soo Park, Heesoo Kim, Sunghee Yun, Uk-Rae Cho, Jae Cheol Son, Sungho Park Samsung Electronics, Hwaseong, Korea The demands for high-performance smart mobile devices are growing exponentially every year. Like the PC market, 64b CPUs are needed to meet this demand. Furthermore, mobile GPU performance is becoming increasingly important as mobile game graphics requirements are pushing the limits of GPU capabilities. For an enhanced mobile game user experience, a multi-core GPU is required. CPU/GPU power efficiency for longer battery life has been a major interest to consumers for many years. In order to support higher performance and power efficiency, two 64b quad-core CPUs with different microarchitectures and a hexa-core GPU are implemented using Samsung’s 20nm gate-last

👥 作者与机构

Jungyul Pyo, Youngmin Shin, Hoi-Jin Lee, Sung-il Bae, Min-su Kim,

分类:Digital Processors · 年份:ISSCC 2015