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ISSCC 2015Session 23 · LOW-POWER SoCsDigital Processors28nm CMOS

A Highly Integrated Smartphone SoC Featuring a 2.5GHz Octa-Core CPU with Advanced High-Performance and Low-Power Techniques

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📋 论文概要

本文介绍了一款高度集成的智能手机SoC,集成了异构八核CPU复合体,采用28nm high-κ metal-gate CMOS工艺制造,通过先进的高性能和低功耗技术,满足了智能手机对计算能力和电池续航的双重需求。

💡 主要创新点

工艺节点
28nm CMOS
重要性
发表年份
ISSCC 2015

🏷 关键词

智能手机SoC异构八核CPU高性能低功耗

📄 原文摘要

Ichiro Lin1, HsinChen Chen1, Wuan Kuo2, Anand Rajagopalan1, Wei-Zheng Ge1, Rolf Lagerquist1, Syed Rahman1, CJ Chung1, Simon Wang2, Lee-Kee Wong2, Yi-Chang Zhuang2, Kent Li1, Jidong Wang1, Minh Chau1, Yijing Liu1, Daniel Dia1, Mark Peng2, Uming Ko2 MediaTek, Austin, TX, 2MediaTek, Hsinchu, Taiwan 1 This paper describes the high-performance CPU design of a heterogeneous octa-core CPU complex, incorporated into a highly integrated mobile SoC for smartphone applications. The SoC is fabricated in a 28nm high-κ metal-gate CMOS, and has a die size of 89mm2. Cu pillars are used for the die-to-substrate interface with fine substrate trace pitch. The SoC is packaged in a 14mm×14mm, 832 ball, 0.4mm pitch BGA. An integrated cellular modem supports rel. 9, cat. 4 LTE (FDD and TDD), while additional cellular and RF connectivity includes DC-HSPA+, TD-SCDMA, EDGE, 802.11ac, Bluetooth LE, multi-GNSS (GPS,

👥 作者与机构

Hugh Mair1, Gordon Gammie1, Alice Wang2, Sumanth Gururajarao1,

分类:Digital Processors · 年份:ISSCC 2015