A 2.4GHz VCO with FOM of 190dBc/Hz at 10kHz-to2MHz Offset Frequencies in 0.13μm CMOS Using an ISF Manipulation Technique

📋 论文概要

本文提出了一种在0.13μm CMOS工艺中实现的2.4GHz VCO，通过使用ISF操纵技术显著改善了近端相位噪声，在10kHz至2MHz偏移频率范围内实现了190dBc/Hz的FOM。该技术有效抑制了闪烁噪声对相位噪声的影响，满足了IEEE 802.11a/b/g等通信标准对低近端相位噪声的要求。

💡 主要创新点

• 提出了一种ISF（脉冲灵敏度函数）操纵技术，通过优化振荡器波形来降低闪烁噪声对近端相位噪声的贡献。
• 在2.4GHz VCO中实现了190dBc/Hz的FOM，覆盖10kHz至2MHz的宽偏移频率范围，显著优于传统结构。

🏷 关键词

📄 原文摘要

For the last few decades, phase-noise (PN) improvement of VCOs has been an intriguing problem and remains as one of the challenges in transceiver design. PN in CMOS VCOs, especially close-in PN, greatly suffers from flicker noise. The flicker noise can even degrade the PN at higher offset frequencies (~1MHz). The close-in PN is important in many communication applications. For instance, IEEE 802.11a/b/g requires a very low PN at 10kHz offset frequency [1] and the PN performance at 100kHz is critical in cellular and Wi-Fi MIMO applications. In addition to the PN performance, oscillators with lower power consumption and smaller area are always on demand. In conventional cross-coupled VCOs, the tail transistor has a large contribution to the PN, especially at close-in offset frequencies [2]. Many efforts have been made to suppress the tail noise. In [2], a trap is placed at the drain of the tail

👥 作者与机构

Ali Mostajeran1,2, Mehrdad Sharif Bakhtiar1, Ehsan Afshari2

Sharif University of Technology, Tehran, Iran, 2Cornell University, Ithaca, NY