A ±3ppm 1.1mW FBAR Frequency Reference with 750MHz Output and 750mV Supply

📋 论文概要

本论文提出一种基于FBAR（薄膜体声波谐振器）的频率参考，输出750MHz，工作在750mV电源下，功耗仅1.1mW，精度达到±3ppm。该设计旨在替代传统石英晶体振荡器，以满足新兴无线应用（如可穿戴设备和物联网）对低成本、小尺寸和晶圆级制造的需求。

💡 主要创新点

• 采用FBAR代替石英晶体作为频率参考源，实现晶圆级集成，大幅降低尺寸和成本。
• 在超低功耗（1.1mW）和低电源电压（750mV）下实现高频率精度（±3ppm），适合电池供电设备。
• 通过电路设计优化，在750MHz高频输出下维持稳定的频率参考性能。

🏷 关键词

📄 原文摘要

Multiple emerging wireless applications (body-worn devices and IoT, for example) will demand previously impossible thin-film form factors and low system cost. One key enabling technology for this paradigm is a new class of radios that offer cost/size approaching RFID while still maintaining peer-to-peer connectivity like more complex radios. These radios need to be cheap and thin, which means they should be fabricated using wafer-scale semiconductor processing. The existing paradigm (quartz crystals used as a frequency reference in radios) is a huge bottleneck in reducing cost and size of these devices. MEMS frequency references have replaced quartz crystals in some applications [1-3]. For example, [1] reports a MEMS reference with 0.5ppm stability but the power consumption (~100mW) and supply voltage (1.8V) are not suitable for low-voltage/low-power radios. [2] reports a 32kHz, 3ppm reference for mobile time-keeping applications, but is unsuitable for radio

👥 作者与机构

Kannan A. Sankaragomathi1, Jabeom Koo1, Richard Ruby2, Brian P. Otis1

University of Washington, Seattle, WA, 2Avago Technologies, San Jose, CA