⚡ 本页包含 AI 生成的分析内容，仅供参考
本文介绍了一款采用15nm CMOS工艺的64Gb MLC NAND闪存，实现了低功耗和高密度存储，以满足移动设备对高吞吐量存储系统的需求。
Kazuyoshi Muraoka1, Masaki Fujiu1, Fumihiro Kouno1, Michio Nakagawa1, Masami Masuda1, Koji Kato1, Yuri Terada1, Yuki Shimizu1, Mitsuaki Honma1, Akihiro Imamoto1, Tomoko Araya1, Hayato Konno1, Takuya Okanaga1, Tomofumi Fujimura1, Xiaoqing Wang1, Mai Muramoto1, Masahiro Kamoshida1, Masatoshi Kohno1, Yoshinao Suzuki1, Tomoharu Hashiguchi1, Tsukasa Kobayashi1, Masashi Yamaoka1, Ryuji Yamashita2 Toshiba Semiconductor and Storage Products, Yokohama, Japan, Sandisk, Yokohama, Japan 1 2 The demand for high-throughput NAND Flash memory systems for mobile applications such as smart phones, tablets, and laptop PCs with solid-state drives (SSDs) has been growing recently. To obtain higher throughput, systems employ multiple NAND Flash memories operating simultaneously in parallel. The available power for a mobile device is severely restricted and the peak total operating current may be high enough to cause large supply-voltage drop or
Mario Sako1, Yoshihisa Watanabe1, Takao Nakajima1, Jumpei Sato1,