⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文介绍了一款28nm嵌入式SG-MONOS闪存宏，专为汽车电子设计，实现了200MHz读操作和2.0MB/s写吞吐量。解决了在170°C极高结温下可靠运行和高数据完整性的挑战。
Accelerated advances in automotive technology, such as sophisticated real-time engine controls for higher fuel efficiency and advanced driver-assistance systems (ADAS), are expanding the application range of Flash MCUs, microcontrollers with embedded Flash memory (eFlash). In addition to consistent demands for faster random access, shorter rewrite time and larger memory capacity in eFlash, there are increasingly intense requirements for robust operations and high data reliability under extremely high junction temperature (Tj) of 170°C. On the other hand, along with device scaling beyond 40nm generation, the reliability of eFlash systems is constrained by not only eFlash memory cells but also peripheral transistors and metal interconnections.
Yasuhiko Taito1, Masaya Nakano1, Hiromi Okimoto1, Daisuke Okada2,
Takashi Ito1, Takashi Kono1, Kenji Noguchi1, Hideto Hidaka1, Tadaaki Yamauchi1 Renesas Electronics, Itami, Japan, 2Renesas Electronics, Hitachinaka, Japan 1