⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种用于STT-MRAM的共价键交叉耦合电流模式读出放大器，解决了1T1MTJ单元结构中因MTJ随机变化和低TMR导致的读取速度慢的问题。通过采用共源线结构阵列和新型读出放大器设计，实现了高速、可靠的读取操作。
candidate for next-generation universal memory technology with high density, high-speed access time, and nonvolatile characteristics. Due to good scalability of the magnetic tunnel junction (MTJ) cell in sub-20nm technical nodes, STT-MRAM also has potential as a system memory, possibly replacing DRAM or SRAM in some applications. However, from the circuit design point of view there are still technical obstacles such as wide random variation of MTJ and low tunnel magnetoresistance (TMR), which keep read-access time from being fast enough for a main memory application when using a 1T1MTJ cell. In several papers, various sensing circuit topologies are proposed to alleviate the weakness of the MTJ cell. A self-reference sensing scheme [1] is a classic one and the recent
Chankyung Kim1, Keewon Kwon2, Chulwoo Park1,
Sungjin Jang1, Joosun Choi1 Samsung Electronics, Hwaseong, Korea, Sungkyunkwan University, Suwon, Korea 1 2 Spin transfer torque magnetoresistive RAM (STT-MRAM) is a potential