A 10.5μA/MHz at 16MHz Single-Cycle Non-Volatile Memory Access Microcontroller with Full State Retention at 108nA in a 90nm Process

📋 论文概要

该论文提出了一种在90nm工艺下实现的低功耗微控制器，支持单周期非易失性存储器访问，并在16MHz下仅消耗10.5μA/MHz，同时实现108nA的全状态保持电流，适用于事件驱动的传感器节点应用。

💡 主要创新点

• 实现单周期非易失性存储器访问，显著降低访问延迟和功耗。
• 在待机模式下实现全状态保持，仅消耗108nA电流，适合电池供电的传感器节点。
• 在16MHz工作频率下达到10.5μA/MHz的超低功耗指标，兼顾高性能与低能耗。

🏷 关键词

📄 原文摘要

is an everincreasing demand for lowering power dissipation, especially for sensor nodes, where low energy consumption translates to longer battery life or operation with a smaller/cheaper battery. At the heart of a sensor node is a microcontroller running code from an embedded non-volatile memory (NVM). In order to support increasing computational needs and low latency (the ability to respond quickly to an event), the microcontroller needs to run at high performance (8-16MHz) and still have low power dissipation. Since most of sensor-node applications are event driven, the nodes, when not active, go into standby mode, to reduce power dissipation. In order to minimize the total energy consumption, it is important to not only reduce active-mode power, but to also lower the power consumption in standby mode, and have the ability to switch between the modes

👥 作者与机构

Vipul Kumar Singhal, Vinod Menezes, Srinivasa Chakravarthy, Mahesh Mehendale

Kilby Labs, Texas Instruments, Bangalore, India With the Internet of Things (IoT) becoming ubiquitous, there