⚡ 本页包含 AI 生成的分析内容,仅供参考
该论文提出了一款在28nm FDSOI工艺上设计的32位SoC,能够在0.33V超低电压和-40°C低温下工作,通过闭环补偿技术应对工艺和温度变化。芯片集成了全数字时钟倍频器和DC-DC转换器,支持能效模式(0.45V)和低泄漏模式(0.33V),解决了极低电压下电路性能与可靠性的挑战。
Jean-Marc Daveau1, Cyril Bottoni1, David Bol4, Julien De-Vos4, Dominique Zamora5, Benjamin Coeffic1, Dimitri Soussan1, Damien Croain1, Mehdi Naceur6, Pierre Schamberger6, Philippe Roche1, Dennis Sylvester3 STMicroelectronics, Crolles, France, Aix-Marseille University, Marseille, France, 3 University of Michigan, Ann Arbor, MI, 4 Universite Catholique de Louvain, Louvain La Neuve, Belgium, 5 MAYA Technologies, Grenoble, France, 6 EASii-IC, Grenoble, France 1 2 A 32b SoC is designed in 28nm FDSOI to operate in either an energy-efficiency (EE) mode, at 0.45V, or low-leakage (LL) mode, at 0.33V, with processtemperature compensation. At near threshold, it overcomes low transistor current at negative temperatures, the need for an extra digital supply IO, and the clocking power costs faced by the internet-of-things (IoT) and wearable systems. The system includes: 1) an all-digital single-supply open-loop clock
Sylvain Clerc1, Mehdi Saligane1,2,3, Fady Abouzeid1, Martin Cochet1,2,