A 3-to-40V 10-to-30MHz Automotive-Use GaN Driver with Active BST Balancing and VSW DualEdge Dead-Time Modulation Achieving 8.3% Efficiency Improvement and 3.4ns Constant Propagation Delay

📋 论文概要

该论文提出了一款用于汽车电子的3-40V宽输入电压、10-30MHz开关频率的GaN驱动器。通过主动自举（BST）平衡电路和VSW双沿死区时间调制技术，解决了高压波动下GaN驱动器的可靠性和效率问题。

💡 主要创新点

• 提出了主动自举（BST）平衡技术，在宽输入电压范围（3-40V）内维持自举电容电压的稳定，避免过压损坏。
• 设计了基于VSW的双沿死区时间调制方法，通过检测开关节点电压动态调整死区时间，降低死区损耗并防止直通。

🏷 关键词

📄 原文摘要

automotive electronics has placed mounting pressure on silicon-based power converters to be increasingly reliable and efficient. Automotive electronics operate from the car battery (VIN) which experiences cold-cranks and load dumps that range from 3V to 40V [1]. This requires power converters, supplied by the battery, to withstand the harsh operating conditions. Compounding these challenges is the growing number of electronics in cars, despite fixed volume and thermal budgets. Gallium Nitride (GaN) FETs have demonstrated merits in alleviating these challenges, due to smaller input/output capacitance and near-zero reverse recovery current in comparison to silicon FETs. These attributes facilitate highly efficient power conversion due to a ×10 reduction in switching losses, and thus enable high

👥 作者与机构

Xugang Ke1, Joseph Sankman2, Min Kyu Song1, Pooya Forghani2, Dongsheng Brian Ma1

University of Texas at Dallas, Richardson, TX, Texas Instruments, Dallas, TX 1 2 The growing demand for both reliability and performance in