⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种1.1V供电、68.2GB/s带宽的8Gb Wide-IO2 DRAM，并引入了非接触式微凸点I/O测试方案以解决传统测试中的接触问题。该设计旨在满足物联网时代对高性能、低功耗移动DRAM的需求。
Tae Yong Lee, Nohhyup Kwak, Woo Yeol Shin, Na Yeon Kim, Yunseok Hong, Kyeong Pil Kang, Dong Yoon Ka, Seong Ju Lee, Yong Sun Kim, Young Kyu Noh, Jaehoon Kim, Dong Keum Kang, Ho Uk Song, Hyeon Gon Kim, Jonghoon Oh SK hynix, Icheon, Korea The emergence of the internet of everything (IoE) demands high-performance, real-time multi-media and wideband networking in battery-operated mobile systems. For this reason, higher bandwidth and lower power mobile DRAMs are becoming increasingly critical. As promising candidates of next-generation mobile DRAM, the development of LPDDR4 [1] and wide-IO2 (WIO2) DRAM is ongoing these days. The conventional single data rate (SDR) wide IO DRAM [2] has achieved ×4 data bandwidth compared to LPDDR2 by increasing the number of IOs (e.g. 512 DQs). The WIO2 DRAM in this paper has 512 DQs, which is the same as SDR wide-IO DRAM, but by using double data rate (DDR) and operating
Young Jun Yoon, Byung Deuk Jeon, Byung Soo Kim, Ki Up Kim,