⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文在28nm CMOS工艺中设计了一款68.1至96.4GHz的可变增益低噪声放大器（LNA），以支持E-Band通信系统的高数据速率需求。通过实现超过20dB的增益和宽频带内平坦的噪声系数，解决了宽带低噪声接收前端的关键挑战。
To allow a maximum theoretical data-rate of 25Gb/s over a 1km distance using 64QAM, an E-Band system should feature a 20dBm-output-power TX and an RX with 10dB maximum noise figure (NF) over two bands of 5GHz from 71 to 76GHz and 81 to 86GHz [1]. To minimize the NF of a fully integrated RX front-end and to compensate for the low conversion gain and high noise of the following mixer, a broadband LNA with a gain in excess of 20dB showing a flat NF over more than a 15GHz bandwidth is required. Moreover, a variable-gain LNA design would be beneficial to accommodate environmental variability (e.g. atmospherics condition, rain, etc.). Prior works on CMOS car-radar transceivers have shown the feasibility of low-noise amplifiers at 79GHz. However, the bandwidth of these systems is limited to about 10GHz [2,3], which is not enough. This paper presents a 28nmbulk-CMOS LNA for E-Band applications that employs transformer-based 4th-order
Marco Vigilante, Patrick Reynaert
KU Leuven, Leuven, Belgium