⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种用于5G相控阵的28GHz高效线性功率放大器，采用28nm bulk CMOS工艺。通过优化电路结构，解决了毫米波功率放大器在功率回退下的效率与线性度折衷问题。
driving fifthgeneration (5G) wireless standardization towards the deployment of gigabit-per-second mm-Wave technology by 2020. Paving the road to 5G, 200m coverage in non-line-of-sight (NLOS) urban cells was demonstrated using practical antenna arrays at 28GHz [1], and the FCC recently issued a notice of inquiry into the provision of mobile services above 24GHz. Battery life and thermal limitations make power efficiency critical in the envisioned user-equipment (UE) phased-array transceivers, particularly for power amplifiers (PAs), which operate at 8-to-10dB power back-off (PBO) to transmit broadband, high-peak-to-average power-ratio (PAPR) signals with high fidelity. Higher yields and lower costs for integrated phased arrays make CMOS the preferred choice over other morepower-efficient technologies, e.g. GaAs. Furthermo
Sherif Shakib1, Hyun-Chul Park2, Jeremy Dunworth2,
Vladimir Aparin2, Kamran Entesari1 Texas A&M University, College Station, TX, 2Qualcomm, San Diego, CA 1 Rapidly growing demand for broadband-cellular-data traffic is