A Complementary VCO for IoE that Achieves a 195dBc/Hz FOM and Flicker Noise Corner of 200kHz

📋 论文概要

该论文提出一种用于物联网（IoE）的互补LC压控振荡器（VCO），通过共模共振技术实现了195dBc/Hz的优值和200kHz的低闪烁噪声拐角。解决了传统VCO在高性能与低噪声之间的权衡问题。

💡 主要创新点

• 采用互补结构（NMOS和PMOS）结合显式或隐式共模共振，提升振荡摆幅并降低相位噪声。
• 通过优化谐振腔设计，使差分模式频率为共模频率的一半，从而在不增加额外电感的情况下实现共模共振。
• 实现了极低的200kHz闪烁噪声拐角，显著优于传统VCO，适用于IoE等低功耗无线应用。

🏷 关键词

📄 原文摘要

An LC oscillator can achieve near optimal performance if the common-mode of the circuit is designed to resonate at twice the oscillation frequency [1-3]. Common-mode resonance can be accomplished with an explicit tail inductor [1] or implicitly by designing the primary resonant tank such that the differential mode is half the common-mode [2,3]. Figures 2.5.1a and 2.5.1b show the NMOS-only and complementary versions [4] of Hegazi’s explicit common mode resonance topology, while Fig. 2.5.1c shows a design that employs implicit common-mode resonance. Implicit common-mode resonance has the advantage of a more easily controlled and modelled common-mode and requires one less inductor, but so far has only been applied to NMOS-only oscillators [2,3]. The primary advantage of an NMOS-only design is that, for a given inductance, lower absolute phase noise can be achieved owing to the larger maximum output swing; however, a complementary design is more suitable for

👥 作者与机构

David Murphy, Hooman Darabi

Broadcom, Irvine, CA