A Fully Integrated 0.55THz Near-Field Sensor with a Lateral Resolution down to 8µm in 0.13µm SiGe BiCMOS

📋 论文概要

本文提出了一款全集成0.55THz近场传感器，采用0.13µm SiGe BiCMOS工艺实现。该传感器通过近场探测突破了传统太赫兹成像的衍射极限，实现了8µm的横向分辨率，并消除了外部照明带来的远场背景杂散干扰。

💡 主要创新点

• 首次将0.55THz近场传感器完全集成在单一芯片上，无需外部光源或分立探测器组件。
• 通过近场探测机制将横向分辨率提升至8µm，远超传统太赫兹成像的毫米级衍射极限。
• 消除了外部照明引起的远场背景杂散，显著改善了动态范围和成像对比度。

🏷 关键词

📄 原文摘要

IHP, Frankfurt, Germany 1 2 Silicon technologies have already been employed in state-of-the-art THz imagers. However, their optical resolution was restricted to millimeters by the diffraction limit [1,2], and THz super-resolution imagers were implemented in aperture or apertureless scanning near-field optical microscopy [3]. Such systems are limited to a single pixel with an illumination source and detector components placed remotely from the near-field sensing area. The resulting dynamic range and imaging contrast are very poor, masked by a far-field background clutter of an external illumination, and requiring long integration-time cooled detectors and high-power source components [3]. We present a room-temperature near-field sensor with illumination, evanescentfield sensing, and detection on a single chip (Fig. 25.1.1). It is operated differentially around 533 to 555GHz in 0.13μm SiGe HBT technology (ft /fmax of

👥 作者与机构

Janusz Grzyb1, Bernd Heinemann2, Ullrich R. Pfeiffer1

University of Wuppertal, Wuppertal, Germany,