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ISSCC 2016Session 25 · mm-WAVE THz SENSINGmm-Wave0.13μm SiGe BiCMOS

A 320GHz Subharmonic-Mixing Coherent Imager in 0.13μm SiGe BiCMOS

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📋 论文概要

本文提出了一种320GHz亚谐波混频相干成像器,采用0.13μm SiGe BiCMOS工艺,通过相干检测代替传统非相干直接检测,显著提升了灵敏度,解决了太赫兹成像中因输出功率衰减快导致的低灵敏度问题。

💡 主要创新点

工艺节点
0.13μm SiGe BiCMOS
重要性
发表年份
ISSCC 2016

🏷 关键词

太赫兹成像相干检测亚谐波混频SiGe BiCMOS

📄 原文摘要

Crolles, France 1 2 Terahertz imaging has been gaining increasing attention for its emerging applications in security, biomedical and material characterization. Previous works have demonstrated terahertz imagers on silicon: in [1], the authors demonstrated a 280GHz 4×4 array and an 860GHz pixel using Schottky-barrier diodes; in [2], a 0.7-to-1.1THz 1k-pixel camera was presented. Unfortunately, most previous works are based on incoherent direct detection (Fig. 25.5.1), which causes low sensitivity due to the output droping quickly with input power (∝VRF2), and, as a result, need exceedingly high power sources for illumination. This problem can be alleviated by utilizing coherent heterodyne detection scheme (Fig. 25.5.1), in

👥 作者与机构

Chen Jiang1, Ali Mostajeran1, Ruonan Han2, Mohammad Emadi3,

Hani Sherry4, Andreia Cathelin4, Ehsan Afshari1 Cornell University, Ithaca, NY, Massachusetts Institute of Technology, Cambridge, MA, 3 Qualcomm, San Jose, CA, 4 STMicroelectronics,

分类:mm-Wave · 年份:ISSCC 2016