256Gb 3b/Cell V-NAND Flash Memory with 48 Stacked WL Layers

📋 论文概要

这篇论文介绍了一款256Gb容量、基于48层堆叠字线（WL）的3位/单元（3b/cell）V-NAND闪存。它解决了对大容量、低成本非易失性存储的需求，通过垂直堆叠技术实现了高密度存储并降低了每比特成本。

💡 主要创新点

• 采用48层堆叠字线结构，相比之前的24层实现了更高存储密度。
• 实现3位/单元（TLC）操作，在垂直堆叠的NAND串中保持可靠性与性能。

📄 原文摘要

Yong Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doogon Kim, Young-Sun Min, Moo-Sung Kim, An-Soo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doo-Sub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kye-Hyun Kyung, Jeong-Hyuk Choi Samsung Electronics, Hwaseong, Korea Today’s explosive demand for data transfer is accelerating the development of non-volatile memory with even larger capacity and cheaper cost. Since the introduction of 3D technology in 2014 [1], V-NAND is believed to be a successful alternative to planar NAND and is quickly displacing planar NAND in the SSD market, due to its performance, reliability, and cost competitiveness. V-NAND has also eliminated the cell-to-cell interference problem by forming an atomic layer for charge trapping [2], which enables further technology scaling. However, the

👥 作者与机构

Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim,