⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文介绍了一款在14nm工艺下制造的128Gb 2b/cell NAND闪存芯片，实现了640μs的编程时间和800MB/s的I/O速率。通过先进的工艺和电路设计，解决了高密度存储与高速读写之间的矛盾。
Sung-won Yun, Min-su Kim, Jong-hoon Lee, Minseok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-no Im, Hyejin Yim, Kyung-hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun-wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Makoto Hirano, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kye-hyun Kyung, Jeong-Hyuk Choi Samsung Electronics, Hwaseong, Korea NAND flash memory is widely used as a cost-effective storage with high performance [1-2]. This paper presents a 128Gb multi-level cell (MLC) NAND flash memory with a 150 cells/string structure in 14nm CMOS that can be used as a cost-effective storage device. This paper also introduces several approaches
Seungjae Lee, Jin-yub Lee, Il-han Park, Jongyeol Park,