⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种用于汽车应用的90nm嵌入式1T-MONOS闪存宏，通过优化存储单元和电路设计，实现了0.07mJ/8kB的重写能量和超过1亿次的耐久性，解决了汽车MCU对高可靠性和低功耗非易失存储的需求。
Takashi Hashimoto2, Hideaki Yamakoshi2, Shinichiro Abe2, Takashi Kono1, Yasuhiko Taito1, Takashi Ito1, Takashi Krafuji1, Kenji Noguchi1, Hideto Hidaka1, Tadaaki Yamauchi1 Renesas Electronics, Kodaira, Japan, Renesas Electronics, Hitachinaka, Japan 1 2 The computerization of automotive control has expanded the application range of micro controller units (MCUs). A high-end engine-control unit (ECU) requires high-performance Flash MCUs, which integrate high-speed CMOS logic and large high-performance embedded Flash memories (eFlash) [1,2]. There are also broad markets for motor control MCUs: used to control actuators in parts such as seats, windows, and mirrors. In order to integrate analog circuits to control the high voltage (HV) drivers in these parts, those MCUs have been manufactured in Flashless process, and external EEPROM chips are being used. EEPROM chips work as ”learning memories” which store the calibration data to optimize analog circuit
Hidenori Mitani1, Ken Matsubara1, Hiroshi Yoshida1,