A 768Gb 3b/cell 3D-Floating-Gate NAND Flash Memory

📋 论文概要

该论文介绍了一款768Gb、3b/cell的3D浮栅NAND闪存芯片，通过创新的3D浮栅单元结构和电路设计，解决了高密度存储中的可靠性和性能问题。

💡 主要创新点

• 采用3D浮栅单元结构，实现了768Gb的高密度存储。
• 通过3b/cell（TLC）技术，在3D NAND中实现了更高的存储密度和成本效益。
• 优化了读写电路和纠错算法，提升了3D浮栅NAND的可靠性和性能。

🏷 关键词

📄 原文摘要

Koichi Kawai1, Jae-Kwan Park2, Shigekazu Yamada1, Feng Pan2, Yuichi Einaga1, Ali Ghalam2, Toru Tanzawa1, Jason Guo2, Takaaki Ichikawa1, Erwin Yu2, Satoru Tamada1, Tetsuji Manabe1, Jiro Kishimoto1, Yoko Oikawa1, Yasuhiro Takashima1, Hidehiko Kuge1, Midori Morooka1, Ali Mohammadzadeh2, Jong Kang2, Jeff Tsai2, Emanuele Sirizotti3, Eric Lee2, Luyen Vu2, Yuxing Liu2, Hoon Choi2, Kwonsu Cheon2, Daesik Song2, Daniel Shin2, Jung Hee Yun2, Michele Piccardi2, Kim-Fung Chan2, Yogesh Luthra2, Dheeraj Srinivasan2, Srinivasarao Deshmukh2, Kalyan Kavalipurapu2, Dan Nguyen2, Girolamo Gallo3, Sumant Ramprasad2, Michelle Luo2, Qiang Tang2, Michele Incarnati3, Agostino Macerola3, Luigi Pilolli3, Luca De Santis3, Massimo Rossini3, Violante Moschiano3, Giovanni Santin3, Bernardino Tronca3, Hyunseok Lee2, Vipul Patel2, Ted Pekny2, Aaron Yip2, Naveen Prabhu4, Purval Sule4, Trupti Bemalkhedkar4, Kiranmayee Upadhyayula4,

👥 作者与机构

Tomoharu Tanaka1, Mark Helm2, Tommaso Vali3, Ramin Ghodsi2,