⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文实现了一款采用64字线层BiCS技术的512Gb 3b/cell闪存，解决了大容量高密度非易失性存储的需求，提升了存储密度和容量。
Toshio Yamamura2, Hiroyuki Mizukoshi1, Shingo Zaitsu1, Minoru Yamashita1, Shunichi Toyama1, Norihiro Kamae1, Juan Lee1, Shuo Chen1, Jiawei Tao1, William Mak1, Xiaohua Zhang1, Ying Yu1, Yuko Utsunomiya2, Yosuke Kato1, Manabu Sakai1, Masahide Matsumoto1, Hardwell Chibvongodze1, Naoki Ookuma1, Hiroki Yabe1, Subodh Taigor1, Rangarao Samineni1, Takuyo Kodama2, Yoshihiko Kamata2, Yuzuru Namai2, Jonathan Huynh1, Sung-En Wang1, Yankang He1, Trung Pham1, Vivek Saraf1, Akshay Petkar1, Mitsuyuki Watanabe1, Koichiro Hayashi1, Prashant Swarnkar1, Hitoshi Miwa1, Aditya Pradhan1, Sulagna Dey1, Debasish Dwibedy1, Thushara Xavier1, Muralikrishna Balaga1, Samiksha Agarwal1, Swaroop Kulkarni1, Zameer Papasaheb1, Sahil Deora1, Patrick Hong1, Meiling Wei1, Gopinath Balakrishnan1, Takuya Ariki1, Kapil Verma1, Chang Siau1, Yingda Dong1, Ching-Huang Lu1, Toru Miwa1, Farookh Moogat1 Western Digital, Milpitas, CA Toshiba, Yokohama, Japan
Ryuji Yamashita1, Sagar Magia1, Tsutomu Higuchi2, Kazuhide Yoneya2,