A 1Mb Embedded NOR Flash Memory with 39μW Program Power for mm-Scale High-Temperature Sensor Nodes

📋 论文概要

该论文提出了一种用于毫米级高温传感器节点的1Mb嵌入式NOR闪存，实现了39μW的超低编程功耗。该设计解决了在极端环境（如油井勘探）下传感器节点对紧凑、非易失、低功耗数据存储的需求。

💡 主要创新点

• 提出了一种低功耗编程方案，使NOR闪存编程功耗降低至39μW，适用于能量受限的微型传感器节点。
• 针对高温环境（150°C）进行了优化设计，保证了数据保持可靠性和稳定性。
• 实现了1Mb存储容量与极低待机功耗，支持传感器节点在电源耗尽时非易失存储。

🏷 关键词

📄 原文摘要

Jingcheng Wang1, Kaiyuan Yang1, Yen-Po Chen1, Junjie Dong1, Minchang Cho1, Gyouho Kim1, Wei-Keng Chang2, Yun-Sheng Chen2, Yu-Der Chih2, David Blaauw1, Dennis Sylvester1 University of Michigan, Ann Arbor, MI TSMC, Hsinchu, Taiwan 1 2 Miniature sensor nodes are ideal for monitoring environmental conditions in emerging applications such as oil exploration. One key requirement for sensor nodes is embedded non-volatile memory for compact and retentive data storage in the event that the sensor power source is exhausted. Non-volatile memory also allows for near-zero standby power modes, which are particularly challenging to achieve at high temperatures when using SRAM in standby due to the exponential rise in leakage with temperature, which rapidly degrades battery life (Fig. 11.2.1). However, traditional NOR flash requires mW-level program and erase power, which cannot be sustained by mm-scale batteries with internal resistances >10kΩ

👥 作者与机构

Qing Dong1, Yejoong Kim1, Inhee Lee1, Myungjoon Choi1, Ziyun Li1,