⚡ 本页包含 AI 生成的分析内容，仅供参考
本文提出了一款512Gb、3b/cell（TLC）的64层堆叠字线3D V-NAND闪存芯片，通过垂直堆叠技术大幅提升了存储密度和容量，解决了传统平面NAND闪存面临的缩放极限问题。
Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-lo Ahn, Jiyoung Lee, Jong-hoon Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sung-Hoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-yub Lee, Ki-Tae Park, Kye-hyun Kyung Samsung Electronics, Hwasung, Korea The advent of emerging technologies such as cloud computing, big data, the internet of things and mobile computing is producing a tremendous amount of data. In the era of big data, storage devices with versatile characteristics are required for ultra-fast processing, higher capacity storage, lower cost, and lower power operation. SSDs employing 3D NAND are a promising to meet these
Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il-han Park, Hyun-Wook Park,