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ISSCC 2017Session 13 · HIGH-PERFORMANCE TRANSMITTERSRF & Wireless

A Fully Integrated Multimode Front-End Module for GSM/EDGE/TD-SCDMA/TD-LTE Applications Using a Class-F CMOS Power Amplifier

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📋 论文概要

本文提出了一款完全集成的多模时分双工发射前端模块(TXM),支持GSM/EDGE/TD-SCDMA/TD-LTE多频段应用。该模块采用Class-F CMOS功率放大器,集成了PA、滤波器和开关,有效减小了射频占用面积,解决了4G多模多频段蜂窝射频前端复杂度高的问题。

💡 主要创新点

重要性
发表年份
ISSCC 2017

🏷 关键词

多模前端模块Class-F功率放大器GSM/EDGE/TD-SCDMA/TD-LTE

📄 原文摘要

Chien-Wei Tseng1, Lai-Ching Lin1, Chris Beale2, Bosen Tseng1, Bernard Tenbroek2, Chinq-Shiun Chiu1, Guang-Kaai Dehng1, George Chien3 MediaTek, Hsinchu, Taiwan MediaTek, Kent, United Kingdom 3 MediaTek, San Jose, CA 1 2 The RF front-end complexity in 4G multimode multiband cellular radios has increased dramatically, requiring integration of PAs, filters and switches in a single module to reduce the RF footprint. This paper presents a fully integrated multimode TDD transmit front-end module (TXM) supporting GSM/EDGE/TDSCDMA/TD-LTE in multiple bands. The TXM is implemented with three die on a 2-layer laminate LGA module (Figs. 13.1.1 and 13.1.7). Two multimode multiband power amplifier paths (LB/HB) are implemented in a 0.153μm 1P6M CMOS process, followed by power combiners and harmonic filters in a 0.18μm 3M2V IPD die and finally an SP10T antenna switch in a 0.18μm 1P3M SOI process. The Si substrate of good thermal conductivity dissipates the heat generated by PA

👥 作者与机构

Ming-Da Tsai1, Chien-Cheng Lin1, Ping-Yu Chen1, Tao-Yao Chang1,

分类:RF & Wireless · 年份:ISSCC 2017