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ISSCC 2017Session 13 · HIGH-PERFORMANCE TRANSMITTERSRF & Wireless14nm FinFET CMOS

A SAW-Less Reconfigurable Multimode Transmitter with a Voltage-Mode Harmonic-Reject Mixer in 14nm FinFET CMOS

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📋 论文概要

本文提出了一种无SAW滤波器的可重构多模发射机,采用电压模式谐波抑制混频器,在14nm FinFET CMOS工艺中实现,解决了多模蜂窝RFIC中高线性度与低噪声之间的权衡问题,降低了物料成本。

💡 主要创新点

工艺节点
14nm FinFET CMOS
重要性
发表年份
ISSCC 2017

🏷 关键词

无SAW发射机谐波抑制混频器可重构多模发射机

📄 原文摘要

Multimode cellular RFICs need high dynamic range in order to simultaneously satisfy the high linearity requirements of LTE and the low-noise performance of 2G. Traditionally, SAW filters are employed to relax the noise-linearity trade-off at the cost of higher BOM. In a highly competitive market, mobile devices need to support >35 LTE bands, a number which is expected to rise further in the future, providing a strong motivation for SAW-less transmitter (TX) design. An LTE TX operating in the single resource-block (RB) mode is susceptible to spurious outof-band (OOB) emission due to the high power spectral density concentrated in narrow bandwidths at frequency offsets as large as 4.5MHz (LTE10) or 9MHz (LTE20) from the carrier [1]. The most challenging condition is for B13 where the

👥 作者与机构

Venumadhav Bhagavatula1, Daehyun Kwon2, Jaehun Lee2,

Quang-Diep Bui2, Jeong-Hyun Choi2, Siuchuang-Ivan Lu1, Sangwon Son1 Samsung Semiconductor, San Jose, CA Samsung Electronics, Gyeongii-do, Korea 1 2

分类:RF & Wireless · 年份:ISSCC 2017