All-Digital RF Transmitter in 28nm CMOS with Programmable RX-Band Noise Shaping

📋 论文概要

该论文提出了一款在28nm CMOS工艺中实现的全数字射频发射机，具有可编程的接收频带噪声整形功能。通过片上RF balun组合I/Q路径输出，匹配50Ω负载，适用于蜂窝低频段。

💡 主要创新点

• 采用全数字架构实现射频发射机，避免了模拟电路的非理想性。
• 引入可编程的接收频带噪声整形技术，可动态调整噪声分布以优化系统性能。
• 在28nm CMOS工艺中实现紧凑的0.82mm²核心面积，并集成16k字存储器支持高速数据流。

🏷 关键词

📄 原文摘要

Paul Stynen2, Kaoutar Bertrand2, Teuvo Korhonen2, Hans Samsom2, Patrick Vandenameele2, Jussi Ryynänen1 Aalto University, Espoo, Finland Huawei Technologies, Leuven, Belgium 1 The TX prototype was fabricated in 28nm CMOS and packaged with flip-chip technology. The die micrograph is shown in Fig. 13.4.7, and the core area measures 0.82mm2. The digital BB data is loaded into a 16k-word memory, from where it can be streamed at a sample rate equal to fc. The outputs of the I and Q paths are combined on-chip through an RF balun, designed to match 50Ω external load in the low band (LB) of the cellular radio spectrum. The circuit uses 1.5V supply for the DACs, and 0.9V supplies for the digital part. The overall power consumption is 150mW, of which 75mW are taken by the DACs, 22mW by the LO divider and DMIX blocks, and 53mW by the ΔΣ and MS blocks. 2 The crowded radio spectrum allocated for 3G/4G mobile communication, together

👥 作者与机构

Enrico Roverato1, Marko Kosunen1, Koen Cornelissens2, Sofia Vatti2,