A Permanent Digital Archive System Based on 4F2 X-Point Multi-Layer Metal Nano-Dot Structure

📋 论文概要

本文提出一种基于4F2交叉点多层金属纳米点结构的永久数字存档系统，利用金属纳米点的存在与否存储数据，实现超过1000年的数据保持能力。通过检测互电容变化读取数据，并采用0/1位平衡编码增强长期可靠性，在0.18μm CMOS原型中验证了加速老化后的功能，28nm CMOS下6层存储堆栈可实现0.4Tb/inch²的容量。

💡 主要创新点

• 提出无晶体管的被动存储单元，仅由金属纳米点位于互连交叉点构成，实现永久数据保存。
• 采用多层存储堆栈结构，无需晶体管即可垂直堆叠，大幅提升存储密度。

📄 原文摘要

Data is saved by the presence of a metal nano-dot at a x-point of interconnects. This passive storage node works as a permanent memory cell with >1,000-years endurance. No transistor is used in the cell, enabling multi-layer memory stack for high-density. Mutual capacitance change due to the nano-dot presence is sensed for data retrieve. A 0/1-bitbalanced encoding enhances long-time reliability. A 0.18μm CMOS prototype successfully operates after accelerated aging (equivalent to a 1,000-years period). A 6-layer memory stack in 28nm CMOS can realize 0.4Tb/inch2 capacity. Worldwide today, the amount of digital data produced and replicated every year is about to approach 10ZB (=1022Bytes) and is predicted to grow up to 40ZB in 2020. This so-called Digital Universe contains precious digital information heritage such as cultural, scientific, personal, and governmental data to be preserved

👥 作者与机构

Noriyuki Miura, Shijia Liu, Tsuyoshi Watanabe, Shigeki Imai, Makoto Nagata

Kobe University, Kobe, Japan A 4F2 permanent digital archive system is presented