A 330mW 14b 6.8GS/s Dual-Mode RF DAC in 16nm FinFET Achieving -70.8dBc ACPR in a 20MHz Channel at 5.2GHz

📋 论文概要

该论文提出了一款14位6.8GS/s的双模式RF DAC，采用16nm FinFET工艺，功耗330mW。它实现了在5.2GHz载波、20MHz信道下-70.8dBc的ACPR，解决了直接RF合成中5-6GHz频段的高线性度与低功耗挑战。

💡 主要创新点

• 提出双模式架构，支持宽带和窄带模式，优化不同应用场景下的性能与功耗。
• 采用16nm FinFET工艺和先进电路技术，在6.8GS/s高采样率下实现14位精度和-70.8dBc ACPR的优异线性度。
• 通过数字预失真和混合信号校准技术，有效补偿非理想性，提升带内和带外失真性能。

🏷 关键词

📄 原文摘要

Bob Verbruggen, John Mcgrath, Diarmuid Collins, Marites De La Torre, Pierrick Gay, Patrick Lynch, Peng Lim, Anthony Collins, Brendan Farley Xilinx, Dublin, Ireland Direct-RF synthesis has gained increasing attention in recent years [1] [2] as it simplifies the transmitter system by eliminating the intermediate frequency stage. It also offers the opportunity to address the extensive range of cellular bands with the same architecture and building blocks. Direct synthesis of carriers in the 5 to 6GHz unlicenced bands remains a challenge for RF-DACs operating in the 1st Nyquist band, as sampling rates in excess of 12GS/s are required. A more power efficient way to synthesize directly these frequencies is to use wideband mixingDACs, which increase the output power in the 2nd and 3rd Nyquist bands [3]. In

👥 作者与机构

Christophe Erdmann, Edward Cullen, Damien Brouard, Roberto Pelliconi,