A 0.2V Trifilar-Coil DCO with DC-DC Converter in

📋 论文概要

该论文提出了一种用于能量收集应用的低压DCO，采用三线线圈（Trifilar-coil）结构并集成DC-DC转换器，在16nm FinFET CMOS工艺中工作电压仅为0.2V。通过优化三线圈的Q因子和金属层组合，实现了188dB FOM、1.3kHz分辨率和38MHz/V的频率推动性能，有效解决了低电压下频率稳定性和推频问题。

💡 主要创新点

• 提出三线线圈（Trifilar-coil）结构，结合厚金属和超厚金属降低串联电阻，实现高Q因子（>11）并减小电源路径压降。
• 集成DC-DC转换器使DCO在0.2V超低电压下工作，适用于能量收集应用。
• 在16nm FinFET先进工艺中实现，达到188dB FOM和极低的频率推动（38MHz/V），兼顾性能与功耗。

🏷 关键词

📄 原文摘要

Resolution, and Frequency Pushing of 38MHz/V for Energy Harvesting Applications QTrifialr=Im(ZTotal)/Re(ZTotal). The total QTrifilar is a combination of Q-factors of the three coils. Two thick metals and one ultra-thick metal are combined to achieve the lowest possible series resistance for the maximum Q-factor and minimum voltage drop in the supply path. The highest QTrifilar exceeds 11 within 3 to 4GHz of the DCO tuning range (TR). Chao-Chieh Li1, Min-Shueh Yuan1, Chih-Hsien Chang1, Yu-Tso Lin1, Chia-Chun Liao1, Kenny Hsieh1, Mark Chen1, Robert Bogdan Staszewski2,3 To reduce the ISF at the NMOS gates, and thus to further improve PN, the normally sinusoidal VG voltage waveform of the Class-F oscillator is turned sharper with higher amplitude. Figure 19.6.2 shows the idea of the third-harmonic resonator placed at the source of M1,2. VS, containing both ω0 and 3ω0 components, gets coupled to VG, which contains only the fundamental at ω0. The

👥 作者与机构

16nm FinFET CMOS with 188dB FOM, 1.3kHz