A 10MHz 3-to-40V VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dBμV Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

📋 论文概要

该论文提出了一种用于汽车应用的GaN DC-DC转换器，采用三斜率栅极驱动技术，在3-40V宽输入电压范围内实现10MHz开关频率，有效抑制了高频EMI噪声，并实现了40.5dBμV的杂散噪声压缩和79.3%的峰值效率。

💡 主要创新点

• 提出三斜率栅极驱动技术，通过优化栅极驱动波形降低高频开关引起的di/dt和dv/dt，从而抑制EMI噪声。
• 实现了3-40V宽输入电压范围下的10MHz高频开关，兼顾了高效率和噪声性能。
• 在GaN功率级中集成了栅极驱动和噪声压缩电路，解决了高频开关带来的电磁干扰问题。

🏷 关键词

📄 原文摘要

applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (fSW). However, there are several issues that must be resolved before using GaN in automotive. High fSW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly

👥 作者与机构

Xugang Ke1, Joseph Sankman1,2, Yingping Chen1, Lenian He3, D. Brian Ma1

University of Texas at Dallas, Richardson, TX Texas Instruments, Dallas, TX 3 Zhejiang University, Hangzhou, China 1 2 As power efficiency becomes essential in automotive