A 1.3A Gate Driver for GaN with Fully Integrated Gate Charge Buffer Capacitor Delivering 11nC Enabled by High-Voltage Energy Storing

📋 论文概要

该论文提出了一种用于GaN晶体管的1.3A栅极驱动器，通过全集成栅电荷缓冲电容器实现11nC的电荷传递。解决了GaN驱动中高电流、高速开关与电容集成难题。

💡 主要创新点

• 首次在栅极驱动器中全集成栅电荷缓冲电容，实现11nC的片上电荷存储与释放。
• 采用级联并联稳压器和堆叠器件结构，支持高电压浮空供电，提升驱动可靠性与效率。

🏷 关键词

📄 原文摘要

The MN1 control and supply circuit (Fig. 25.3.2 bottom) turns on MN1 via MN2, controlled by level shifter LS. D2 prevents discharging of the MN2 gate capacitance, when node GMN1 rises. D3 ensures 5V-over-voltage protection for N4. As MN2 turns off, the Charge Completion block pulls GMN1 to its final level, V5f (5V). The floating supply V5f is generated by two cascaded shunt regulators. The small Shunt Regulator 1 rapidly resets capacitor CS of the larger Shunt Regulator 2 to its target value at CB1 recharge. CB1 and CB2 are stacked devices. Reutlingen University, Reutlingen, Germany More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN

👥 作者与机构

Achim Seidel, Bernhard Wicht