A 500Mb/s 200pJ/b Die-to-Die Bidirectional Link with 24kV Surge Isolation and 50kV/μs CMR using Resonant Inductive Coupling in 0.18μm CMOS

📋 论文概要

该论文提出了一种基于谐振电感耦合的die-to-die双向链路，实现了500Mb/s的数据速率和200pJ/b的能效，同时提供24kV浪涌隔离和50kV/μs共模抑制，解决了传统电容/变压器耦合隔离器因隔离距离限制而难以兼顾高速与高隔离的问题。

💡 主要创新点

• 采用谐振电感耦合机制，在保持高隔离电压（24kV）的同时实现高速双向数据传输（500Mb/s）。
• 通过优化耦合结构和电路设计，达到50kV/μs的共模抑制能力，显著提升抗干扰性能。
• 实现了200pJ/b的低功耗，适用于高能效的隔离通信场景。

🏷 关键词

📄 原文摘要

Kumar Anurag Shrivastava1, Madhulatha Bonu1, Benjamin Sutton2, Venugopal Gopinathan1, Ganesan Thiagarajan1, Abhijit Patki1, Jhankar Malakar1, Nagendra Krishnapura3 Texas Instruments, Bangalore, India Texas Instruments, Dallas, TX 3 IIT Madras, Chennai, India 1 2 Chip based digital isolators are being developed for higher speed and higher isolation capabilities [1, 2]. These make use of various coupling mechanisms such as capacitive coupling [3] and transformer coupling [4]. A limitation of these technologies is that they need to maintain a low separation (distance through insulation DTI<30μm) through high quality insulators (oxides, polyamides) in order to achieve data rate and isolation performance [2]. These require expensive special process development and special packaging techniques to meet reinforced isolation recommended by IEC 60747-5-5 and VDE 0884-10. Other high-speed die-to-die communication techniques implemented using millimeter-wave and

👥 作者与机构

Subhashish Mukherjee1, Anoop Narayan Bhat1,