A 0.44e-rms Read-Noise 32fps 0.5Mpixel HighSensitivity RG-Less-Pixel CMOS Image Sensor Using Bootstrapping Reset

📋 论文概要

本文提出一种采用自举复位技术的无复位栅极像素CMOS图像传感器，实现了0.44e-rms的极低读出噪声和32fps帧率、0.5M像素分辨率。通过优化像素结构提高转换增益，并结合高增益列ADC与多采样技术，解决了传统复位栅极像素的噪声问题。

💡 主要创新点

• 提出自举复位技术，消除复位栅极，降低像素噪声并提高灵敏度。
• 通过优化浮置扩散节点电容实现高转换增益，结合高增益列ADC和多采样进一步抑制读出噪声。

🏷 关键词

📄 原文摘要

noise level, particularly, deep sub-electron read noise (less than 0.5e-rms), have been reported. Such an ultra-low noise level is realized with a reduced floating diffusion (FD) node capacitance for attaining the high pixel conversion gain (CG) [1,2], and a high-gain readout circuitry with noise-reduction capabilities [3,4]. Recently, a reset-gate-less (RGL) CMOS image sensor has been reported [5]. It shows an excellent read noise performance using an optimized pixel structure for high CG and high-gain column ADC with multiple sampling. In this technique, however, a very high pulsed voltage of approximately 25V for the FD reset is essential to cause a punch-through effect. It is not suitable for image sensors with high pixel resolution and high-speed signal readout.

👥 作者与机构

Min-Woong Seo1, Tongxi Wang1, Sung-Wook Jun2, Tomoyuki Akahori2,

Shoji Kawahito1,2 Shizuoka University, Hamamatsu, Japan 2 Brookman Technology, Hamamatsu, Japan 1 In the past several years, CMOS image sensors (CISs) with sub-single-electron