8Mb/s 28Mb/mJ Robust True-Random-Number Generator in 65nm CMOS Based on Differential Ring Oscillator with Feedback Resistors

📋 论文概要

该论文提出了一种基于差分环形振荡器与反馈电阻的鲁棒真随机数发生器（TRNG），在65nm CMOS工艺中实现，具有8Mb/s的吞吐率和28Mb/mJ的能效。通过差分结构和反馈电阻提升对PVT变化的鲁棒性，无需复杂校准电路。

💡 主要创新点

• 采用差分环形振荡器并引入反馈电阻，增强随机比特对工艺、电压、温度变化的鲁棒性。
• 实现高能效（28Mb/mJ）的随机比特生成，吞吐率8Mb/s，无需复杂的校准或偏置控制。

🏷 关键词

📄 原文摘要

On-chip true random number generators (TRNG) have been gaining attention as an important component for building secure systems [1]. CMOS TRNGs typically exploit device-level noise, such as thermal or flicker noise to generate random bits [2]. Among various types of CMOS TRNGs, the meta-stability-based TRNG is known to have very high throughput for random bit generation, but it requires sophisticated control and calibration circuits to suppress bias [6]. Another popular type is the ring oscillator (RO)-based TRNG, which utilizes timing jitter [1-5]. Relatively simple circuits make it an attractive option, but there remains a need to improve the tolerance against power supply attacks and process/environmental variations [3]. Recently, selective use of a certain set of inverter chains based on pre-tuning was proposed to mitigate process variation effects [2]. We present a differential RO cell with feedback resistors to overcome process

👥 作者与机构

Eunhwan Kim, Minah Lee, Jae-Joon Kim

Pohang University of Science and Technology, Pohang, Korea