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ISSCC 2017Session 8 · DIGITAL PLLs AND SECURITY CIRCUITSDigital Circuits65nm CMOS

A 0.42ps-Jitter -241.7dB-FOM Synthesizable Injection-Locked PLL with Noise-Isolation LDO

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📋 论文概要

该论文提出了一种基于噪声隔离LDO的可综合注入锁定PLL,通过离散时间LDO实现时移操作,隔离PLL免受电源和LDO噪声影响,从而在噪声SoC环境中保持鲁棒性。在65nm CMOS工艺下,采用标准单元库和数字设计工具实现,在0.9GHz振荡频率下实现了0.42ps抖动和3.8mW功耗。

💡 主要创新点

核心指标
0.42ps抖动,-241.7dB FOM,3.8mW功耗@0.9GHz
工艺节点
65nm CMOS
重要性
发表年份
ISSCC 2017

🏷 关键词

注入锁定PLL噪声隔离LDO可综合PLL低抖动标准单元

📄 原文摘要

(ILPLL), using a noise-isolation LDO. The noise-isolation LDO realizes a time-shift operation to isolate the PLL from both supply and LDO noise, so the IL-PLL operation remains robust, even within a noisy SoC. The core layout of the PLL is implemented using solely a foundry provided standard-cell library for a 65nm CMOS process with standard digital design tools. Among synthesizable PLLs, jitter performance of 0.42ps is achieved with 3.8mW power consumption at 0.9GHz oscillation. Figure 8.5.1 shows a comparison between a common continuous-time (CT) LDO and the proposed discrete-time (DT) LDO. A conventional synthesizable PLL [15] has no supply regulation by the LDO, so it may potentially experience a frequency jump when faced with a sudden supply-voltage change. It is relatively

👥 作者与机构

Huy Cu Ngo, Kengo Nakata, Toru Yoshioka, Yuki Terashima,

Kenichi Okada, Akira Matsuzawa Tokyo Institute of Technology, Tokyo, Japan This paper presents a supply regulated synthesizable injection-locked PLL

分类:Digital Circuits · 年份:ISSCC 2017