A 7nm FinFET SRAM Using EUV Lithography with Dual Write-Driver-Assist Circuitry for Low-Voltage Applications

📋 论文概要

该论文提出了一种采用极紫外（EUV）光刻技术的7nm FinFET SRAM，并设计了双写驱动辅助电路，以解决低电压应用中的写入问题。通过EUV单次曝光实现高分辨率图案化，克服了传统ArF浸没式多重图案化的限制，从而提升芯片密度和低电压性能。

💡 主要创新点

• 采用EUV光刻技术实现7nm FinFET SRAM的高分辨率图案化，减少多重图案化复杂度并提升密度。
• 提出双写驱动辅助电路，通过增强写入驱动能力改善低电压下的写入稳定性，降低最小工作电压。

🏷 关键词

📄 原文摘要

Changnam Park, Jeongho Do, Sunghyun Park, Sungwee Cho, Hyuntaek Jung, Bongjae Kwon, Hyun-Su Choi, JaeSeung Choi, Jong Shik Yoon Samsung Electronics, Hwaseong, Korea SRAM plays an integral role in the power, performance, and area of a mobile system-on-a-chip. To achieve low power and high density, extreme ultraviolet (EUV) technology is adopted for the 7nm FinFET technology [3-4]. Conventional ArF immersion with a single exposure for an extreme high-resolution patterning shows the limitation of lithographic patterning. Therefore, multi-patterning lithographic technique is applied to support a high-resolution lithography. However, this also includes process variations due to using multi-pattering masks. Alternatively, EUV offers competitive scaling with a single-mask with the benefit of smaller wavelength, which provides smaller process variation with less additional pattering. Figure 11.2.1 shows a 7nm EUV FinFET 6T high-density (HD)

👥 作者与机构

Taejoong Song, Jonghoon Jung, Woojin Rim, Hoonki Kim, Yongho Kim,