← 返回论文列表 📄 下载原文 PDF  ISSCC 2018 · 12.4
ISSCC 2018Session 12 · DRAMMemory

A 16Gb/s/pin 8Gb GDDR6 DRAM with Bandwidth Extension Techniques for High-Speed Applications

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

本文提出了一款采用带宽扩展技术的16Gb/s/pin 8Gb GDDR6 DRAM,通过四分之一速率时钟架构、2-tap DFE和连续时间线性均衡器等创新,解决了高带宽图形DRAM面临的数据传输速度瓶颈问题。

💡 主要创新点

核心指标
16Gb/s/pin 数据速率, 8Gb 容量
重要性
发表年份
ISSCC 2018

🏷 关键词

GDDR6DRAM带宽扩展高速接口均衡技术

📄 原文摘要

Dae-Han Kwon, Hyun-Bae Lee, Geun-Il Lee, Sang-Sic Yoon, Jin-Youp Cha, Soo-Young Jang, Seung-Hun Lee, Yong-Suk Joo, Gang-Sik Lee, Sung-Soo Xi, Soo-Bin Lim, Kyung-Ho Chu, Joo-Hwan Cho, Junhyun Chun, Jonghoon Oh, Jinkook Kim, Seok-Hee Lee SK hynix, Gyeonggi, Korea Recently the demand for high-bandwidth graphic DRAM, for game consoles and graphic cards, has dramatically increased due to the development of virtual reality, artificial intelligence, deep learning, autonomous driving cars, etc. These applications require greater data transfer speeds than pervious devices, GDDR5

👥 作者与机构

Kyu-Dong Hwang, Boram Kim, Sang-Yeon Byeon, Kyu-Young Kim,

分类:Memory · 年份:ISSCC 2018