A 665μW Silicon Photomultiplier-Based NIRS/EEG/EIT Monitoring ASIC for Wearable Functional Brain Imaging

📋 论文概要

该论文提出了一款基于硅光电倍增管（SiPM）的665μW多模态监测ASIC，集成了近红外光谱（NIRS）、脑电图（EEG）和电阻抗断层成像（EIT）三种功能，用于可穿戴功能性脑成像。通过采用SiPM实现高灵敏度低功耗NIRS检测，并首次将三种模态集成在单芯片上，解决了传统脑成像设备体积大、功耗高的问题。

💡 主要创新点

• 首次将硅光电倍增管（SiPM）用于NIRS检测，实现高灵敏度与低功耗的平衡。
• 在单芯片上集成NIRS、EEG和EIT三种模态，支持多模态同步监测。
• 整体功耗仅665μW，适合可穿戴设备长时间连续工作。

🏷 关键词

📄 原文摘要

Hyunsoo Ha1, Roland van Wegberg1, Erfan Sheikhi1, Massimo Mazzillo3, Giorgio Fallica3, Walter De Raedt2, Chris Van Hoof2,4, Nick Van Helleputte2 imec - Holst Centre, Eindhoven, The Netherlands; 2imec, Leuven, Belgium 3 STMicroelectronics, Catania, Italy; 4KU Leuven, Leuven, Belgium 1 Functional brain imaging is considered a powerful and practical solution for understanding the brain and neurological diseases. While EEG is an established method for non-invasive electrical activity, electrical-impedance tomography (EIT) and near-infrared spectroscopy (NIRS) can additionally measure impedance changes and hemodynamic processes. To facilitate long-term multi-channel brain imaging in a wearable form factor without cabling overhead, there is a need for low-power local amplifiers [1] to support all these modalities. The main principle of optical hemodynamic measurements is to send light pulses into the tissue and

👥 作者与机构

Jiawei Xu1, Mario Konijnenburg1, Budi Lukita1, Shuang Song2,