A 0.53pJ∙K2 7000μm2 Resistor-Based Temperature Sensor with an Inaccuracy of ±0.35°C (3σ) in 65nm CMOS

📋 论文概要

本文提出了一种基于电阻的温度传感器，采用65nm CMOS工艺，实现了0.53pJ∙K²的能耗和7000μm²的小面积，并在-40°C至125°C范围内达到±0.35°C（3σ）的高精度，解决了传统BJT传感器在亚1V供电下不兼容以及面积过大的问题。

💡 主要创新点

• 采用电阻作为感温元件，替代传统BJT，兼容低电压工艺，实现更小的芯片面积。
• 通过电路设计优化，在保持高精度的同时显著降低了能耗（0.53pJ∙K²）和面积（7000μm²）。
• 实现了±0.35°C（3σ）的宽温度范围高精度，适用于密集热监测的多传感器集成。

🏷 关键词

📄 原文摘要

Jieun Jang2, Junhyun Chun2, Kofi A. A. Makinwa3, Youngcheol Chae1 Yonsei University, Seoul, Korea; 2SK hynix, Icheon, Korea Delft University of Technology, Delft, The Netherlands 1 3 In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5].

👥 作者与机构

Woojun Choi1, Yong-Tae Lee1, Seonhong Kim2, Sanghoon Lee2,