⚡ 本页包含 AI 生成的分析内容，仅供参考
本文介绍了一款采用96字线层技术的512Gb 3b/单元（TLC）3D闪存芯片，解决了高密度存储与层数扩展的挑战。通过优化工艺和电路设计，实现了大容量与非易失性存储。
Teruo Takagiwa1, Susumu Ozawa1, Jumpei Sato1, Yoshihiko Shindo1, Manabu Sato1, Naoaki Kanagawa1, Junji Musha1, Satoshi Inoue1, Katsuaki Sakurai1, Naohito Morozumi1, Ryo Fukuda1, Yuui Shimizu1, Toshifumi Hashimoto1, Xu Li1, Yuuki Shimizu1, Kenichi Abe1, Tadashi Yasufuku1, Takatoshi Minamoto1, Hiroshi Yoshihara1, Takahiro Yamashita1, Kazuhiko Satou2, Takahiro Sugimoto1, Fumihiro Kono1, Mitsuhiro Abe1, Tomoharu Hashiguchi1, Masatsugu Kojima1, Yasuhiro Suematsu2, Takahiro Shimizu1, Akihiro Imamoto1, Naoki Kobayashi1, Makoto Miakashi1, Kouichirou Yamaguchi1, Sanad Bushnaq1, Hicham Haibi1, Masatsugu Ogawa1, Yusuke Ochi1, Kenro Kubota2, Taichi Wakui2, Dong He1, Weihan Wang1, Hiroe Minagawa1, Tomoko Nishiuchi1, Hao Nguyen3, Kwang-Ho Kim3, Ken Cheah3, Yee Koh3, Feng Lu3, Venky Ramachandra3, Srinivas Rajendra3, Steve Choi3, Keyur Payak3, Namas Raghunathan3, Spiros Georgakis3, Hiroshi Sugawara3, Seungpil Lee3, Takuya Futatsuyama1, Koji Hosono1,
Hiroshi Maejima1, Kazushige Kanda1, Susumu Fujimura1,