⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文报道了一款1Tb容量、每单元4比特的64层堆叠字线3D NAND闪存，实现了12MB/s的编程吞吐量，解决了高密度存储与高性能编程的矛盾。
Seungbum Kim, Kangbin Lee, Jisu Kim, Jiyoon Park, Han-Jun Lee, Minseok Kim, Seonyong Lee, SeonGeon Lee, Jinbae Bang, Dongjin Shin, Hwajun Jang, Deokwoo Lee, Nahyun Kim, Jonghoo Jo, Jonghoon Park, Sohyun Park, Youngsik Rho, Yongha Park, Ho-joon Kim, Cheon An Lee, Chungho Yu, Youngsun Min, Moosung Kim, Kyungmin Kim, Seunghyun Moon, Hyunjin Kim, Youngdon Choi, YoungHwan Ryu, Jinwon Choi, Minyeong Lee, Jungkwan Kim, Gyo Soo Choo, Jeong-Don Lim, Dae-Seok Byeon, Kiwhan Song, Ki-Tae Park, Kye-hyun Kyung Samsung Electronics, Hwaseong, Korea Since the first demonstration of a production quality three-dimensional (3D) stacked-word-line NAND Flash memory [1], the 3b/cell 3D NAND Flash memory has seen areal density increases of more than 50% per year due to the aggressive development of 3D-wordline-stacking technology. This trend has been consistent for the last three consecutive years [2-4], however the storage market still requires
Seungjae Lee, Chulbum Kim, Minsu Kim, Sung-min Joe, Joonsuc Jang,