32GHz Resonant-Fin Transistors in 14nm FinFET Technology

📋 论文概要

该论文在14nm FinFET工艺中实现了32GHz谐振鳍晶体管，解决了高频MEMS谐振器与先进CMOS工艺集成的问题。通过利用FinFET的鳍结构作为谐振元件，实现了高频率和高Q值的片上谐振器。

💡 主要创新点

• 首次在14nm FinFET工艺中利用鳍结构实现32GHz谐振晶体管，无需额外MEMS后处理。
• 通过CMOS兼容的工艺集成，实现了高频谐振器与先进晶体管的单片集成，降低了寄生效应。

🏷 关键词

📄 原文摘要

of microelectromechanical resonators in IC technology has been explored extensively over the past few decades in the effort to achieve onchip clocks, RF filters, and physical, chemical, and biological sensors. Various approaches for resonator integration, actuation, and sensing have been proposed and demonstrated, targeting high Q and high frequency performance [1]. These include the “MEMS-last” approach with low temperature materials deposited on complete CMOS chips [2,3], and “MEMS-in-the-middle” in which resonators are defined with post-processing of the front end and back end materials of the IC stack [4]. These methods require additional processing and packaging steps that make frequency scaling challenging and may limit resonator Q. Meanwhile, in the

👥 作者与机构

Bichoy Bahr1, Yanbo He2, Zoran Krivokapic3, Srinivasa Banna3, Dana Weinstein2

Massachusetts Institute of Technology, now at Kilby Labs - Texas Instruments, Dallas, TX 2 Purdue University, West Lafayette, IN; 3GLOBALFOUNDRIES, Santa Clara, CA 1 Monolithic integration