⚡ 本页包含 AI 生成的分析内容,仅供参考
该论文提出了一种工作在301.7-331.8GHz的全集成频率稳定化源,采用0.13μm BiCMOS工艺,通过完全片上反馈环路替代传统PLL,解决了THz频段自由运行振荡器因电源噪声和环境变化导致的频率漂移和线宽问题。
King Abdulaziz City for Science and Technology, Riyadh, Saudi Arabia, 4 STMicroelectronics, Crolles, France 1 3 The THz band has shown its unique characteristics and great potential in many applications. Harmonic oscillators are commonly used to generate THz signals; however, due to supply noise and ambient environment changes, free-running THz oscillators exhibit large spectral linewidth and frequency drift. As a result, frequency stabilization is required in many systems. Conventionally, PLLs are used for this purpose [1-3]; however, major challenges exist when frequency goes into THz band. Since the division ratio (N) is large in THz PLLs (103 to 104) and the reference phase noise is multiplied by N2 to the output, a high-quality off-chip crystal oscillator is needed to keep the noise contribution low enough. Moreover, the large N causes significant VCO-noise folding, potentially degrading the output
Chen Jiang1,2, Mohammed Aseeri3, Andreia Cathelin4, Ehsan Afshari1
University of Michigan, Ann Arbor, MI; 2Cornell University, Ithaca, NY