A 3-to-40V VIN 10-to-50MHz 12W Isolated GaN Driver with Self-Excited tdead Minimizer Achieving

📋 论文概要

该论文提出了一种适用于3-40V宽输入电压、10-50MHz高频的12W隔离式GaN驱动器，采用自激式死区时间最小化技术，实现了0.2ns/0.3ns的死区时间、7.9%的最小占空比和50V/ns的共模瞬态抗扰度，解决了高频GaN驱动中死区时间优化和隔离难题。

💡 主要创新点

• 提出自激式死区时间最小化电路，无需外部控制即可自动优化死区时间，显著降低开关损耗。
• 实现宽输入电压范围（3-40V）和高频（10-50MHz）下的隔离驱动，同时保持高共模瞬态抗扰度（50V/ns）。
• 通过集成驱动和死区优化，在12W功率等级下达到极低的死区时间（0.2ns/0.3ns）和最小占空比（7.9%）。

🏷 关键词

📄 原文摘要

Xugang Ke, D. Brian Ma University of Texas at Dallas, Richardson, TX High-frequency (fSW), wide-input (VIN) power converters have gained increasing popularity in automotive applications due to the heightening demand for low profile, high power density and fast dynamic response [1]. To implement such converters, it is widely believed that Gallium Nitride (GaN) technology would replace conventional silicon technology in the future due to far-superior figures of merit (RDSON×QG) [2,3]. Hence, there are urgent needs in developing compatible GaN driving techniques and circuits that enable high efficiency, high conversion ratio (CR) and high reliability power conversion at high fSW. Among many challenges in accomplishing these goals, gate driver dead-time (tdead) control and ground-interference isolation require the most immediate attention. Figure 24.3.1 shows a conventional GaN gate driver with a fixed tdead control [4,5].

👥 作者与机构

0.2ns/0.3ns tdead, 7.9% Minimum Duty Ratio and, 50V/ns CMTI